ANNEALING OF PHOSPHORUS IMPLANTED SILICON-WAFERS BY MULTISCANNING ELECTRON-BEAM - SOLAR-CELLS APPLICATION

被引：9

作者：

BENTINI, GG

GALLONI, R

GABILLI, E

NIPOTI, R

OLZI, E

SERVIDORI, M

TURISINI, G

ZIGNANI, F

机构：

[1] C.N.R. Istituto LAMEL, via Castagnoli 1, 40126 Bologna, Italy

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 11期

关键词：

All Open Access; Bronze;

D O I：

10.1063/1.328625

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6735 / 6742

页数：8

共 27 条

[1]

AUSTON DH, 1979, LASER SOLID INTERACT, P11

[2]

BAKISH R, 1978, ELECTRON ION BEAM SC

[3] MULTI-SCANNING ELECTRON-BEAM ANNEALING OF PHOSPHORUS-IMPLANTED SILICON [J].

BENTINI, GG ;

GALLONI, R ;

NIPOTI, R .

APPLIED PHYSICS LETTERS, 1980, 36 (08) :661-663

[4]

BENTINI GG, P IBMM80 C ALBANY

[5]

BENTINI GG, 1980, LASER ELECTRON BEAM, P272

[6] INCORPORATION OF IMPLANTED IN AND SB IN SILICON DURING AMORPHOUS LAYER REGROWTH [J].

BLOOD, P ;

BROWN, WL ;

MILLER, GL .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) :173-182

[7] SUPERSATURATED SOLID-SOLUTIONS AFTER SOLID-PHASE EPITAXIAL-GROWTH IN BI-IMPLANTED SILICON [J].

CAMPISANO, SU ;

RIMINI, E ;

BAERI, P ;

FOTI, G .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :170-172

[8] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J].

CSEPREGI, L ;

MAYER, JW ;

SIGMON, TW .

APPLIED PHYSICS LETTERS, 1976, 29 (02) :92-93

[9]

FERRIS SD, 1979, LASER SOLID INTERACT

[10] INFLUENCE OF IMPURITIES AND CRYSTALLINE DEFECTS ON ELECTRON-MOBILITY IN HEAVILY DOPED SILICON [J].

FINETTI, M ;

GALLONI, R ;

MAZZONE, AM .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) :1381-1385

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