NUMERICAL-SIMULATION OF A COUPLED-QUANTUM-WELL RESONANT-TUNNELING TRANSISTOR

被引：2
作者：
TANIYAMA, H
TOMIZAWA, M
YOSHII, A
机构：
[1] NTT LSI Laboratories, Atsugi-Shi, Kanagawa, 243-01, 3-1, Morinosato Wakamiya
来源：
JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 10期
关键词：
D O I：
10.1063/1.355751
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The quantum distributed model of the resonant tunneling transistor is improved based on a generalized S-matrix method. As a result, a model of the base current and the collector current is formulated in a consistent way and incoherent tunnelings are also considered. This model is used to study the coupled-quantum-well resonant tunneling transistor, and it is found that the resonance in the collector current disappears because of the spatial dependence of the resonance in the collector current when there is large internal resistance or a large scattering rate. It is also found that inclusion of the hole current is important in calculating the device characteristics of the resonant tunneling transistor.
引用
收藏
页码：5079 / 5086
页数：8
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