NUMERICAL-SIMULATION OF A COUPLED-QUANTUM-WELL RESONANT-TUNNELING TRANSISTOR

被引：2
|
作者：
TANIYAMA, H
TOMIZAWA, M
YOSHII, A
机构：
[1] NTT LSI Laboratories, Atsugi-Shi, Kanagawa, 243-01, 3-1, Morinosato Wakamiya
来源：
JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 10期
关键词：
D O I：
10.1063/1.355751
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The quantum distributed model of the resonant tunneling transistor is improved based on a generalized S-matrix method. As a result, a model of the base current and the collector current is formulated in a consistent way and incoherent tunnelings are also considered. This model is used to study the coupled-quantum-well resonant tunneling transistor, and it is found that the resonance in the collector current disappears because of the spatial dependence of the resonance in the collector current when there is large internal resistance or a large scattering rate. It is also found that inclusion of the hole current is important in calculating the device characteristics of the resonant tunneling transistor.
引用
收藏
页码：5079 / 5086
页数：8
相关论文
共 50 条
  • [1] SIMULATION OF EMITTER SIZE EFFECTS IN THE COUPLED-QUANTUM-WELL BASE RESONANT-TUNNELING TRANSISTOR
    TANIYAMA, H
    TOMIZAWA, M
    YOSHII, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1995, 34 (2B): : 1232 - 1235
  • [2] RESONANT TUNNELING IN A NOVEL COUPLED-QUANTUM-WELL BASE TRANSISTOR
    WAHO, T
    MAEZAWA, K
    MIZUTANI, T
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1992, (120): : 601 - 606
  • [3] RESONANT TUNNELING IN A NOVEL COUPLED-QUANTUM-WELL BASE TRANSISTOR
    WAHO, T
    MAEZAWA, K
    MIZUTANI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (12A): : L2018 - L2020
  • [4] Simulation of emitter size effects in the coupled-quantum-well base resonant tunneling transistor
    Taniyama, Hideaki
    Tomizawa, Masaaki
    Yoshi, Akira
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1995, 34 (2 B): : 1232 - 1235
  • [5] COUPLED-QUANTUM-WELL FIELD-EFFECT RESONANT-TUNNELING TRANSISTOR FOR MULTIVALUED LOGIC MEMORY APPLICATIONS
    MIKKELSON, CH
    SEABAUGH, AC
    BEAM, EA
    LUSCOMBE, JH
    FRAZIER, GA
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (02) : 132 - 137
  • [6] INGAAS RESONANT-TUNNELING TRANSISTORS USING A COUPLED-QUANTUM-WELL BASE WITH STRAINED ALAS TUNNEL BARRIERS
    KOCH, S
    WAHO, T
    MIZUTANI, T
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (09) : 1498 - 1503
  • [7] EXPERIMENTAL DERIVATION OF RESONANT TUNNELING TRANSIT-TIME USING A COUPLED-QUANTUM-WELL BASE TRANSISTOR
    WAHO, T
    MIZUTANI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (3B): : L386 - L389
  • [8] RESONANT-TUNNELING THROUGH COUPLED DOUBLE-QUANTUM-WELL
    LIU, LJ
    NIU, C
    LIN, ZH
    ACTA PHYSICA SINICA-OVERSEAS EDITION, 1995, 4 (06): : 434 - 440
  • [9] Nonparabolicity effects in the bipolar quantum-well resonant-tunneling transistor
    Clark, KP
    Kirk, WP
    Seabaugh, AC
    PHYSICAL REVIEW B, 1997, 55 (11) : 7068 - 7072
  • [10] PSEUDOMORPHIC BIPOLAR QUANTUM RESONANT-TUNNELING TRANSISTOR
    SEABAUGH, AC
    FRENSLEY, WR
    RANDALL, JN
    REED, MA
    FARRINGTON, DL
    MATYI, RJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (10) : 2328 - 2334
12345