SCHOTTKY AND METAL-INSULATOR-SEMICONDUCTOR DIODES USING POLY(3-HEXYLTHIOPENE)

被引：16

作者：

KUO, CS ^{[1
]}

WAKIM, FG ^{[1
]}

SENGUPTA, SK ^{[1
]}

TRIPATHY, SK ^{[1
]}

机构：

[1] UNIV MASSACHUSETTS LOWELL,CTR ADV MAT,DEPT CHEM,LOWELL,MA 01854

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 5A期

关键词：

CONDUCTING POLYMER; POLY(3-ALKYLTHIOPHENE); POLY(3-HEXYLTHIOPHENE); ORGANIC SCHOTTKY DIODE; ORGANIC TUNNEL DIODE;

D O I：

10.1143/JJAP.33.2629

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The semiconducting polymer poly(3-hexylthiophene) (P3HT) has been previously used to fabricate Schottky barriers and metal-insulator-semiconductor (MIS) tunnel diodes using indium as the blocking contact. When P3HT is doped with FeCl3, the conductivity increases and the polymer behaves as a p-type semiconductor. Schottky junctions fabricated on the doped material exhibited higher rectification ratios than equivalent junctions fabricated on undoped material. An indium contact evaporated on FeCl3-doped P3HT film gave the current-voltage (I-V) characteristics of a minority carrier tunnel diode. Similar I-V characteristics were observed when a thin insulating polymer film was placed between the indium contact and the doped P3HT film.

引用

页码：2629 / 2632

页数：4

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