IN-SITU LASER-INDUCED FLUORESCENCE STUDIES OF LASER-CHEMICAL VAPOR-DEPOSITION OF TIN THIN-FILMS

被引：8

作者：

CHEN, XL

MAZUMDER, J

机构：

[1] Department of Mechanical and Industrial Engineering, Center for Laser-Aided Materials Processing, University of Illinois at Urbana-Champaign, Urbana

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 03期

关键词：

D O I：

10.1063/1.112352

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

TiN films are deposited on Si(100) from a reactant gas mixture of TiCl4, N2, and H-2 by chemical vapor deposition with a CO2 laser. Pulsed dye laser-induced fluorescence spectroscopy is applied to obtain gas phase species concentration during deposition in order to study the reaction and film growth mechanisms. Ti atomic species are found close to the substrate surface with concentrations in the order of 10(11) cm-3.

引用

页码：298 / 300

页数：3

共 9 条

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