THE CHARACTERIZATION OF THE A-SI-H ELECTROLYTE INTERFACE THROUGH PHOTOELECTROCHEMICAL MEASUREMENTS

Experimental studies have been made on a-Si : H/electrolyte interface in order to investigate the type of the barrier and the charge carriers behaviour, when crossing the barrier. For analysing the mechanism of the current growth under illumination, the methods of cyclic voltammetry, of modified potential ramp and of potential steps have been used. For analysing the interface double layer, differential capacity measurements have been performed through the impedance method. The interface under light shows a Schottky type barrier, within the potential range -0.5 to -0.8 V; the current carriers are released from slow surface states.