MECHANISM OF FREQUENCY-CONVERSION IN AN N-TYPE INSB MIXER

被引:0
作者
GERSHENZON, EM
GRACHEV, SA
LITVAKGORSKAYA, LB
机构
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1991年 / 25卷 / 11期
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中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A comprehensive investigation was made of an n-type InSb mixer operating at lambda = 2.6 mm. The current-voltage characteristics were recorded in a field E = 0.2 V/cm, the temperature dependence of the conductivity was determined in the range T = 1.6-20 K, the hf conductivity was measured at frequencies f = 0.5-10 MHz, and the magnetoresistance was determined in fields H = 0-5 kOe. Under optimal conditions the mechanism of frequency conversion was related to photoionization processes involving hopping photoconductivity. A hopping photoconductivity model was used to calculate the conversion efficiency of the mixer and the results were compared with the experimental data. It was found that a model of frequency conversion in compensated n -type InSb (with the compensation ratio K greater-than-or-equal-to 0.8) based on electron heating was unsatisfactory. The requirements in respect of the parameters of the material and in respect of the conditions of operation of an n-type InSb mixer in the millimeter wavelength range were analyzed.
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页码:1196 / 1204
页数:9
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