IMPROVED GAAS TRANSMISSION PHOTOCATHODE

被引：26

作者：

ALLENSON, MB

ROWLAND, MC

STEWARD, GJ

SYMS, CHA

KING, PGR

机构：

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1972年 / 5卷 / 10期

关键词：

D O I：

10.1088/0022-3727/5/10/101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L89 / &

共 15 条

[1]

ALLEN GA, 1971, J PHYS D, P308

[2] A GAAS-CS-O TRANSMISSION PHOTOCATHODE [J].

ANDREW, D ;

GOWERS, JP ;

HENDERSON, JA ;

PLUMMER, MJ ;

STOCKER, BJ ;

TURNBULL, AA .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1970, 3 (03) :320-+

[3] OPERATION OF III-V SEMICONDUCTOR PHOTOCATHODES IN SEMITRANSPARENT MODE [J].

ANTYPAS, GA ;

JAMES, LW ;

UEBBING, JJ .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) :2888-&

[4] 3-5 COMPOUND PHOTOCATHODES - A NEW FAMILY OF PHOTOEMITTERS WITH GREATLY IMPROVED PERFORMANCE [J].

BELL, RL ;

SPICER, WE .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (11) :1788-+

[5] ELECTROREFLECTANCE SPECTRA OF ALXGA1-X AS ALLOYS [J].

BEROLO, O ;

WOOLLEY, JC .

CANADIAN JOURNAL OF PHYSICS, 1971, 49 (10) :1335-&

[6] PREPARATION AND PROPERTIES OF ALAS-GAAS MIXED CRYSTALS [J].

BLACK, JF ;

KU, SM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (03) :249-&

[7] EXPERIMENTAL EVIDENCE FOR OPTICAL POPULATION OF X MINIMA IN GAAS [J].

EDEN, RC ;

MOLL, JL ;

SPICER, WE .

PHYSICAL REVIEW LETTERS, 1967, 18 (15) :597-&

[8]

EDEN RC, 1967, 52211 STANF TECH REP

[9] GAAS-GAXAL1-XAS HETEROSTRUCTURE INJECTION LASERS WHICH EXHIBIT LOW THRESHOLDS AT ROOM TEMPERATURE [J].

HAYASHI, I ;

PANISH, MB .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) :150-&

[10] DEPENDENCE ON CRYSTALLINE FACE OF BAND BENDING IN CS2 O-ACTIVATED GAAS [J].

JAMES, LW ;

ANTYPAS, GA ;

EDGECUMBE, J ;

MOON, RL ;

BELL, RL .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (12) :4976-+

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