ELECTRICAL-PROPERTIES OF CERIA-DOPED YTTRIA

被引：36

作者：

MARQUES, FMB ^{[1
]}

WIRTZ, GP ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT MAT SCI & ENGN,URBANA,IL 61801

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1991年 / 74卷 / 03期

关键词：

D O I：

10.1111/j.1151-2916.1991.tb04066.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The electrical conductivity and ionic domain of several ceria-doped yttria compositions, with up to 10 cation% dopant, were studied as a function of temperature (800-degrees to 1100-degrees-C) and oxygen partial pressure (10(-15) to 10(5) Pa). The ionic conduction in ceria-doped yttria involves the transport of interstitial oxygen ion defects. The increase of electronic conductivity under reducing conditions with increasing dopant concentration suggests hopping of small polarons between cerium ions with different valences as the dominant conduction mechanism.

引用

页码：598 / 605

页数：8

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