共 7 条
- [1] [Anonymous], 1982, LASER ANNEALING SEMI
- [2] FANG F, 1985, NUCLEAR INSTRUMENTS, V718, P348
- [3] TIME-RESOLVED CONDUCTANCE AND REFLECTANCE MEASUREMENTS OF SILICON DURING PULSED-LASER ANNEALING [J]. PHYSICAL REVIEW B, 1983, 27 (02): : 1079 - 1087
- [5] CHARACTERISTICS OF MOSFETS FABRICATED IN LASER-RECRYSTALLIZED POLYSILICON ISLANDS WITH A RETAINING WALL STRUCTURE ON AN INSULATING SUBSTRATE [J]. ELECTRON DEVICE LETTERS, 1980, 1 (10): : 206 - 208
- [6] SHEN ZY, UNPUB FABRICATION CM
- [7] ZON SC, 1983, ACTA ELECTRON, V11, P1