INVESTIGATIONS OF MICROWAVE FARADAY-ROTATION IN SINGLE-CRYSTALS OF N-TYPE GERMANIUM AT LIQUID-N2 TEMPERATURE

被引:0
作者
SETHI, BR [1 ]
SRIVASTAVA, GP [1 ]
机构
[1] UNIV DELHI,DEPT PHYS & ASTROPHYS,MICROWAVE LAB,DELHI 110007,INDIA
关键词
D O I
10.1063/1.1663239
中图分类号
O59 [应用物理学];
学科分类号
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页码:5330 / 5334
页数:5
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共 17 条
[1]   HIGH PULSED MAGNETIC FIELD MICROWAVE FARADAY ROTATION IN N-TYPE GERMANIUM + SILICON [J].
BRODWIN, ME ;
BURGESS, TJ .
APPLIED PHYSICS LETTERS, 1964, 5 (11) :224-&
[2]   INCLUSION OF MULTIPLE REFLECTIONS IN THEORY OF FARADAY EFFECT IN SEMICONDUCTORS [J].
DONOVAN, B ;
MEDCALF, T .
BRITISH JOURNAL OF APPLIED PHYSICS, 1964, 15 (10) :1139-&
[3]   THEORY OF FARADAY EFFECT IN ANISOTROPIC SEMICONDUCTORS [J].
DONOVAN, B ;
WEBSTER, J .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1962, 79 (507) :46-&
[4]   THE INCLUSION OF MULTIPLE REFLECTIONS IN THE FORMULATION OF THE FARADAY EFFECT IN SEMICONDUCTORS [J].
DONOVAN, B ;
MEDCALF, T .
PHYSICS LETTERS, 1963, 7 (05) :304-306
[5]   NOTE ON FARADAY EFFECT IN ANISOTROPIC SEMICONDUCTORS [J].
DONOVAN, B ;
WEBSTER, J .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1962, 79 (511) :1081-&
[6]   FARADAY EFFECT IN NON-DEGENERATE SEMICONDUCTORS [J].
DONOVAN, B ;
WEBSTER, J .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (503) :120-&
[7]   THEORY OF FARADAY EFFECT IN ANISOTROPIC SEMICONDUCTORS .2. APPLICATION TO N-TYPE GERMANIUM [J].
DONOVAN, B ;
WEBSTER, J .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 81 (519) :90-&
[8]   DEPENDENCE OF FREE-CARRIER FARADAY ELLIPTICITY IN SEMICONDUCTORS ON SCATTERING MECHANISMS [J].
FURDYNA, JK ;
BRODWIN, ME .
PHYSICAL REVIEW, 1961, 124 (03) :740-&
[9]  
FURDYNA JK, 1960, PHYS REV, V120, P1955
[10]   CONDUCTIVITY VARIATION OF MICROWAVE FARADAY-ROTATION IN N-TYPE GERMANIUM [J].
SETHI, BR .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 17 (02) :575-582