PIEZORESISTANCE OF N-TYPE GERMANIUM

被引：99
作者：
FRITZSCHE, H
机构：
来源：
PHYSICAL REVIEW | 1959年 / 115卷 / 02期
关键词：
D O I：
10.1103/PhysRev.115.336
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
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页码：336 / 345
页数：10
相关论文
共 23 条
[1]  
ADAMS EN, CMLTNP3 CHIC MIDW LA
[2]  
Brooks H., 1955, ADV ELECT ELECT PHYS, V7, P85
[3]   HALL EFFECT AND DENSITY OF STATES IN GERMANIUM [J].
CONWELL, EM .
PHYSICAL REVIEW, 1955, 99 (04) :1195-1198
[4]   RELAXATION TIME ANISOTROPY IN N-TYPE GERMANIUM [J].
GOLDBERG, C .
PHYSICAL REVIEW, 1958, 109 (02) :331-335
[5]   MAGNETORESISTANCE SYMMETRY RELATION IN N-GERMANIUM [J].
GOLDBERG, C ;
HOWARD, WE .
PHYSICAL REVIEW, 1958, 110 (05) :1035-1039
[6]   TRANSPORT PROPERTIES OF A MANY-VALLEY SEMICONDUCTOR [J].
HERRING, C .
BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (02) :237-290
[7]   TRANSPORT AND DEFORMATION-POTENTIAL THEORY FOR MANY-VALLEY SEMICONDUCTORS WITH ANISOTROPIC SCATTERING [J].
HERRING, C ;
VOGT, E .
PHYSICAL REVIEW, 1956, 101 (03) :944-961
[8]   TEMPERATURE DEPENDENCE OF THE ELASTORESISTANCE IN N-TYPE GERMANIUM [J].
KEYES, RW .
PHYSICAL REVIEW, 1955, 100 (04) :1104-1105
[9]   THEORY OF DONOR STATES IN SILICON [J].
KOHN, W ;
LUTTINGER, JM .
PHYSICAL REVIEW, 1955, 98 (04) :915-922
[10]   SHALLOW IMPURITY STATES IN SILICON AND GERMANIUM [J].
KOHN, W .
SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 5 :257-320
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