SURFACE-STATES ON GALLIUM-PHOSPHIDE

被引：35

作者：

NORMAN, D

MCGOVERN, IT

NORRIS, C

机构：

[1] UNIV LEICESTER, DEPT PHYS, LEICESTER LE1 7RH, W YORKSHIRE, ENGLAND

[2] NEW UNIV ULSTER, SCH PHYS SCI, COLERINE BT52 1SA, LONDONDERRY, NORTH IRELAND

来源：

PHYSICS LETTERS A | 1977年 / 63卷 / 03期

关键词：

D O I：

10.1016/0375-9601(77)90940-9

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：384 / 386

页数：3

共 18 条

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ASPNES, DE ;

OLSON, CG ;

LYNCH, DW .

PHYSICAL REVIEW B, 1975, 12 (06) :2527-2538

[2] INTRINSIC SURFACE STATES IN 3-5 COMPOUNDS [J].

CALANDRA, C ;

SANTORO, G .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (02) :L51-L54

[3] ELECTRONIC PROPERTIES OF CLEAN CLEAVED (110) GAAS SURFACES [J].

DINAN, JH ;

GALBRAIT.LK ;

FISCHER, TE .

SURFACE SCIENCE, 1971, 26 (02) :587-&

[4] RELATION OF SCHOTTKY BARRIERS TO EMPTY SURFACE STATES ON 3-5 SEMICONDUCTORS [J].

EASTMAN, DE ;

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[5] COMMENT ON SELECTION-RULE EFFECTS IN ELECTRON-ENERGY-LOSS SPECTROSCOPY OF GE AND GAAS SURFACES [J].

FREEOUF, JL .

PHYSICAL REVIEW LETTERS, 1976, 36 (18) :1095-1098

[6] PHOTOEMISSION STUDY OF SURFACE STATES OF (110) GAAS SURFACE [J].

GREGORY, PE ;

SPICER, WE .

PHYSICAL REVIEW B, 1976, 13 (02) :725-738

[7] ELECTRONIC SURFACE PROPERTIES OF 3-5 SEMICONDUCTORS - EXCITONIC EFFECTS, BAND-BENDING EFFECTS, AND INTERACTIONS WITH AU AND O ADSORBATE LAYERS [J].

GUDAT, W ;

EASTMAN, DE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :831-837

[8] SYNCHROTRON SPECTROSCOPY - NORMAL INCIDENCE MONOCHROMATOR AND AN APPROACH TO ORDER-SORTING PROBLEMS [J].

HOWELLS, M ;

NORRIS, C ;

WILLIAMS, GP .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1977, 10 (03) :259-263

[9] WORK FUNCTION VARIATIONS OF GALLIUM-ARSENIDE CLEAVED SINGLE-CRYSTALS [J].

HUIJSER, A ;

VANLAAR, J .

SURFACE SCIENCE, 1975, 52 (01) :202-210

[10] ELECTRONIC SURFACE PROPERTIES OF UHV-CLEAVED 3-5 COMPOUNDS [J].

HUIJSER, A ;

VANLAAR, J ;

VANROOY, TL .

SURFACE SCIENCE, 1977, 62 (02) :472-486

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