REVIEW OF SOME CHARGE TRANSPORT PROPERTIES OF SILICON

被引：882
作者：
JACOBONI, C [1 ]
CANALI, C [1 ]
OTTAVIANI, G [1 ]
QUARANTA, AA [1 ]
机构：
[1] UNIV MODENA, IST FIS, I-41100 MODENA, ITALY
来源：
SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 02期
关键词：
D O I：
10.1016/0038-1101(77)90054-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：77 / 89
页数：13
相关论文
共 99 条
[1]   MEASUREMENTS OF CURRENT-FIELD STRENGTH CHARACTERISTIC OF N-TYPE GALLIUM ARSENIDE USING VARIOUS HIGH-POWER MICROWAVE TECHNIQUES [J].
ACKET, GA ;
DEGROOT, J .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) :505-+
[2]   CURRENT OSCILLATIONS IN N-TYPE SILICON [J].
ASCHE, M ;
SARBEI, OG .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 8 (01) :K61-&
[3]   ABHANGIGKEIT DER ANISOTROPIE DER ELEKTRISCHEN LEITFAHIGKEIT DES SILIZIUMS VOM ELEKTRISCHEN FELD [J].
ASCHE, M ;
BOITSCHE.BL ;
SARBEJ, OG .
PHYSICA STATUS SOLIDI, 1965, 9 (02) :323-&
[4]   CONDUCTIVITY OF HOT ELECTRONS IN N-SI AT LIQUID NEON TEMPERATURE [J].
ASCHE, M ;
SARBEI, OG .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1971, 46 (02) :K121-&
[5]   CURRENT TRANSPORT IN NARROW-BASE TRANSISTORS [J].
BACCARANI, G ;
JACOBONI, C ;
MAZZONE, AM .
SOLID-STATE ELECTRONICS, 1977, 20 (01) :5-10
[6]   ELECTRON-MOBILITY EMPIRICALLY RELATED TO PHOSPHORUS CONCENTRATION IN SILICON [J].
BACCARANI, G ;
OSTOJA, P .
SOLID-STATE ELECTRONICS, 1975, 18 (06) :579-580
[7]   DRIFT VELOCITY SATURATION IN MOS TRANSISTORS [J].
BAUM, G ;
BENEKING, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (06) :481-+
[8]  
BOICHENK.BL, 1966, FIZ TVERD TELA+, V7, P1631
[9]   DEVIATIONS FROM OHMS LAW IN GERMANIUM AND SILICON [J].
BROWN, MACS .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 19 (3-4) :218-227
[10]  
BUTCHER PN, 1973, ELECT CRYSTALLINE SO, P103
12345678910