A COMPARISON OF SIMPLE THEORETICAL-MODELS FOR THE PHOTOIONIZATION OF IMPURITIES IN SEMICONDUCTORS

被引：27

作者：

AMATO, MA ^{[1
]}

RIDLEY, BK ^{[1
]}

机构：

[1] UNIV ESSEX,DEPT PHYS,COLCHESTER CO4 3SQ,ESSEX,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1980年 / 13卷 / 10期

关键词：

D O I：

10.1088/0022-3719/13/10/023

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：2027 / 2039

页数：13

共 17 条

[11] ON THE PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS [J].

Lucovsky, G. .

[12] CAPTURE OF HOT ELECTRONS BY GOLD CENTRES IN N-TYPE GERMANIUM [J].

PRATT, RG ;

RIDLEY, BK .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 81 (524) :996-&

[13] MULTIPHONON CAPTURE RATE IN SEMICONDUCTORS [J].

RIDLEY, BK .

RIDLEY, BK .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (10) :2015-2026

[15] THE QUANTUM DEFECT METHOD [J].

SEATON, MJ .

[16]

Stoneham A. M, 1975, THEORY DEFECTS SOLID, P271

[17]

Whittaker E. T., 1946, COURSE MODERN ANAL