APPLICATION OF SELF-ALIGNED COSI2 INTERCONNECTION IN SUBMICROMETER CMOS TRANSISTORS

被引：27

作者：

BROADBENT, EK

IRANI, RF

MORGAN, AE

MAILLOT, P

机构：

[1] SIGNET CORP,PHILIPS RES LABS SUNNYVALE,SUNNYVALE,CA 94088

[2] SIGNET CORP,ADV TECHNOL DEV,SUNNYVALE,CA 94088

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 11期

关键词：

D O I：

10.1109/16.43664

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2440 / 2446

页数：7

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[9] DIRECT SILICIDATION OF CO ON SI BY RAPID THERMAL ANNEALING [J].

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