共 18 条
[1]
INFLUENCE OF SPUTTERING, RANGE SHORTENING AND STRESS-INDUCED OUT-DIFFUSION ON RETENTION OF XENON IMPLANTED IN SILICON
[J].
NUCLEAR INSTRUMENTS & METHODS,
1976, 132 (JAN-F)
:387-392
[2]
CHRISTODOULIDES CE, UNPUBLISHED
[4]
FREEMAN JH, 1974, P INT C ION IMPLANTS
[5]
GRANT WA, 1976, SCI PROG, V63, P27
[6]
GRANT WA, 1977, 4TH P INT C ION IMPL
[7]
SANTRY DC, 1975, PRCMA33 AECL PROGR R
[8]
WHITTON JL, 1977, RAD EFF, V32, P115
[9]
WHITTON JL, 1972, RAD EFF, V16, P107
[10]
RECRYSTALLIZATION OF ION-IMPLANTED SILICON LAYERS .1. PB-ION IMPLANTED SI
[J].
RADIATION EFFECTS AND DEFECTS IN SOLIDS,
1977, 32 (1-2)
:55-66