INTERFACE STATES AND ELECTRON-SPIN RESONANCE CENTERS IN THERMALLY OXIDIZED (111) AND (100) SILICON-WAFERS

被引:470
作者
POINDEXTER, EH [1 ]
CAPLAN, PJ [1 ]
DEAL, BE [1 ]
RAZOUK, RR [1 ]
机构
[1] FAIRCHILD CAMERA & INSTRUMENT CORP,RES & DEV LAB,PALO ALTO,CA 94304
关键词
D O I
10.1063/1.328771
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:879 / 884
页数:6
相关论文
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