X-RAY REFLECTIVITY STUDY OF SIO2 ON SI

被引：20

作者：

HEALD, SM ^{[1
]}

JAYANETTI, JKD ^{[1
]}

BRIGHT, AA ^{[1
]}

RUBLOFF, GW ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 03期

关键词：

D O I：

10.1116/1.576803

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

X-ray reflectivity is a powerful probe of thin film morphology. It can be used to nondestructively determine the interface and surface roughness, thickness, and density of the layers. This paper presents the application of the technique to the case of Si02on Si. Experimental reflectivity results with a dynamic range of 106 have been obtained on a number of oxide layers prepared using processing conditions. The reflectivity oscillations caused by oxide layers could be easily observed over this entire range, and significant differences were observed between samples. In particular, a plasma enhanced chemical vapor deposition grown oxide is found to have an interfacial layer of lower density. © 1990, American Vacuum Society. All rights reserved.

引用

页码：2046 / 2048

页数：3

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