Characteristics of Magnetic Tunnel Junctions Incorporating Nano-Oxide Layers

被引：0
作者：
Chu, In Chang [1 ]
Chun, Byong Sun [1 ]
Song, Min Sung [1 ]
Lee, Seong Rae [1 ]
Kim, Young Keun [1 ]
机构：
[1] Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea
来源：
JOURNAL OF THE KOREAN MAGNETICS SOCIETY | 2006年 / 16卷 / 02期
关键词：
magnetic tunnel junction; nano-oxide layer; thermal stability; surface flatness;
D O I：
10.4283/JKMS.2006.16.2.136
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The tunneling magnetoresistance (TMR) ratios of magnetic tunnel junctions (MTJs), in general, decrease abruptly above 250 degrees C due to Mn interdiffusion from an antiferromagnet IrMn layer to a ferromagnetic CoFe and/or a tunnel barrier. To improve thermal stability, we prepared MTJs with nano-oxide layers. Using a MTJ structure consisting of underlayer CoNbZr 4/bufferlayer CoFe 10/antiferromaget IrMn 7.5/pinned layer CoFe 3/tunnel barrier AIO/freelayer CoFe 3/capping CoNbZr 2 (om), we placed a nano-oxide layer (NOL) into the underlayer or bufferlayer. Then, the thermal, structural and magneto-electric properties were measured. The TMR ratio, surface flatness, and thermal stability of the MTJs with NOLs were promoted.
引用
收藏
页码：136 / 139
页数：4
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