INXGA1-XASYP1-Y-INP HETEROJUNCTION PHOTODIODES

被引：44

作者：

WIEDER, HH ^{[1
]}

CLAWSON, AR ^{[1
]}

MCWILLIAMS, GE ^{[1
]}

机构：

[1] USN,CTR OCEAN SYST,DIV ELECTR MAT SCI,SAN DIEGO,CA 92152

来源：

APPLIED PHYSICS LETTERS | 1977年 / 31卷 / 07期

关键词：

D O I：

10.1063/1.89718

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：468 / 470

页数：3

共 10 条

[1]

ANTYPAS GA, 1973, 1972 P S GAAS, P48

[2]

Bogatov A. P., 1975, Soviet Journal of Quantum Electronics, V4, DOI 10.1070/QE1975v004n10ABEH011746

[3] CONCENTRATION-DEPENDENCE OF ABSORPTION-COEFFICIENT FOR N-TYPE AND P-TYPE GAAS BETWEEN 1.3 AND 1.6 EV [J].

CASEY, HC ;

SELL, DD ;

WECHT, KW .

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[4] EVIDENCE FOR LOW SURFACE RECOMBINATION VELOCITY ON N-TYPE INP [J].

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BUEHLER, E .

APPLIED PHYSICS LETTERS, 1977, 30 (05) :247-249

[5]

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[6] ROOM-TEMPERATURE OPERATION OF GALNASP-LNP DOUBLE-HETEROSTRUCTURE DIODE LASERS EMITTING AT 1.1 MU-M [J].

HSIEH, JJ .

APPLIED PHYSICS LETTERS, 1976, 28 (05) :283-285

[7] EFFICIENT LATTICE-MATCHED DOUBLE-HETEROSTRUCTURE LEDS AT 1.1 MU-M FROM GA-XIN-1-XAS-YP-1-Y [J].

PEARSALL, TP ;

MILLER, BI ;

CAPIK, RJ ;

BACHMANN, KJ .

APPLIED PHYSICS LETTERS, 1976, 28 (09) :499-501

[8]

PRINCE MB, 1967, SEMIMETALS SEMICONDU, V5, P85

[9] ANALYSIS AND DESIGN CONSIDERATIONS OF BURSTEIN NARROW-BAND PHOTON DETECTORS [J].

SALEH, N ;

SOLIMAN, A .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 37 (01) :39-43

[10]

SERAPHIN BO, 1967, SEMICONDUCT SEMIMET, V3, P527

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