ALGAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION FOR VISIBLE LASER

被引：50

作者：

MORI, Y

WATANABE, N

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 04期

关键词：

D O I：

10.1063/1.329007

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2792 / 2798

页数：7

共 11 条

[1]

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[3]

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[8] ELECTRON-MOBILITY IN COMPENSATED GAAS AND ALXGA1-XAS [J].

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[10] METALORGANIC CVD GROWTH OF GAAS-GAAIAS DOUBLE HETEROJUNCTION LASERS HAVING LOW INTERFACIAL RECOMBINATION AND LOW THRESHOLD CURRENT [J].

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