LASER ANNEALING OF BORON-IMPLANTED SILICON

被引：193

作者：

YOUNG, RT

WHITE, CW

CLARK, GJ

NARAYAN, J

CHRISTIE, WH

MURAKAMI, M

KING, PW

KRAMER, SD

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 32卷 / 03期

关键词：

D O I：

10.1063/1.89959

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：139 / 141

页数：3

共 10 条

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JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) :3702-&

[2] DISORDER PRODUCED BY HIGH-DOSE IMPLANTATION IN SI [J].

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LAU, SS ;

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SIGMON, TW .

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[3]

DVURECHENSKY AV, 1977, 1ST USSR US SEM ION

[4]

KACHURIN GA, 1976, SOV PHYS SEMICOND+, V10, P1128

[5]

KHAIBULLIN IB, 1977, SOV PHYS SEMICOND+, V11, P190

[6]

KHAIBULLIN IB, 1977, 1ST USSR US SEM ION

[7] LASER ANNEALING OF ARSENIC IMPLANTED SILICON [J].

KRYNICKI, J ;

SUSKI, J ;

UGNIEWSKI, S ;

GROTZSCHEL, R ;

KLABES, R ;

KREISSIG, U ;

RUDIGER, J .

PHYSICS LETTERS A, 1977, 61 (03) :181-182

[8]

KUTUKOVA OG, 1976, SOV PHYS SEMICOND+, V10, P265

[9]

SHTYRKOV EI, 1975, SOV PHYS SEMICOND+, V9, P1309

[10] DIFFUSION OF BORON FROM SHALLOW ION IMPLANTS IN SILICON [J].

WAGNER, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (11) :1570-&

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