A CHARGE-SHEET CAPACITANCE MODEL BASED ON DRAIN CURRENT MODELING

被引:3
作者
BUDDE, W
LAMFRIED, WH
机构
[1] Department of Electron Devices and Circuits, University of Duisburg
关键词
D O I
10.1109/16.55755
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Based upon the charge-sheet approach analytical models of the drain current and the capacitances of a MOSFET are formulated. Mobility reduction due to velocity saturation and interface scattering of carriers are taken into account. A saturation criterion is developed from the condition of output conductance continuity. The capacitance modeling requires no additional parameters not contained in the dc model. The comparison with experimental data confirms the theory to be useful for analog circuit simulation down to channel lengths of about 1 μm. © 1990 IEEE
引用
收藏
页码:1678 / 1687
页数:10
相关论文
共 12 条
[1]   ANALYTICAL IGFET MODEL INCLUDING DRIFT AND DIFFUSION CURRENTS [J].
BACCARANI, G ;
RUDAN, M ;
SPADINI, G .
IEE JOURNAL ON SOLID-STATE AND ELECTRON DEVICES, 1978, 2 (02) :62-68
[2]   MAXIMUM DRIFT VELOCITY OF MOS-FIELD-EFFECT TRANSISTORS [J].
BAUM, G .
SOLID-STATE ELECTRONICS, 1970, 13 (06) :789-+
[3]   CHARGE-SHEET MODEL OF MOSFET [J].
BREWS, JR .
SOLID-STATE ELECTRONICS, 1978, 21 (02) :345-355
[4]   A SMALL GEOMETRY MOSFET MODEL FOR CAD APPLICATIONS [J].
GUEBELS, PP ;
VANDEWIELE, F .
SOLID-STATE ELECTRONICS, 1983, 26 (04) :267-273
[5]   EFFECTS OF DIFFUSION CURRENT ON CHARACTERISTICS OF METAL-OXIDE (INSULATOR)-SEMICONDUCTOR TRANSISTORS [J].
PAO, HC ;
SAH, CT .
SOLID-STATE ELECTRONICS, 1966, 9 (10) :927-+
[6]   MEASUREMENT AND MODELING OF SHORT-CHANNEL MOS-TRANSISTOR GATE CAPACITANCES [J].
SHEU, BJ ;
KO, PK .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1987, 22 (03) :464-472
[7]   A SIMPLE-MODEL FOR THE OVERLAP CAPACITANCE OF A VLSI MOS DEVICE [J].
SHRIVASTAVA, R ;
FITZPATRICK, K .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (12) :1870-1875
[8]  
Tsividis Y., 1987, OPERATION MODELING M
[9]   ON THE SMALL-SIGNAL BEHAVIOR OF THE MOS-TRANSISTOR IN QUASISTATIC OPERATION [J].
TURCHETTI, C ;
MASETTI, G ;
TSIVIDIS, Y .
SOLID-STATE ELECTRONICS, 1983, 26 (10) :941-949
[10]   LONG-CHANNEL MOSFET MODEL [J].
VANDEWIELE, F .
SOLID-STATE ELECTRONICS, 1979, 22 (12) :991-997