A CHARGE-SHEET CAPACITANCE MODEL BASED ON DRAIN CURRENT MODELING

被引：3

作者：

BUDDE, W

LAMFRIED, WH

机构：

[1] Department of Electron Devices and Circuits, University of Duisburg

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 07期

关键词：

D O I：

10.1109/16.55755

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Based upon the charge-sheet approach analytical models of the drain current and the capacitances of a MOSFET are formulated. Mobility reduction due to velocity saturation and interface scattering of carriers are taken into account. A saturation criterion is developed from the condition of output conductance continuity. The capacitance modeling requires no additional parameters not contained in the dc model. The comparison with experimental data confirms the theory to be useful for analog circuit simulation down to channel lengths of about 1 μm. © 1990 IEEE

引用

页码：1678 / 1687

页数：10

共 12 条

[1] ANALYTICAL IGFET MODEL INCLUDING DRIFT AND DIFFUSION CURRENTS [J].