PHOTOEMISSION OSCILLATIONS DURING EPITAXIAL-GROWTH

被引：23

作者：

ECKSTEIN, JN

WEBB, C

WENG, SL

BERTNESS, KA

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 22期

关键词：

D O I：

10.1063/1.98485

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1833 / 1835

页数：3

共 11 条

[1] ADSORPTION OF TUNGSTEN ON STEPPED TUNGSTEN SURFACES STUDIED BY WORK FUNCTION MEASUREMENT [J].

BESOCKE, K ;

WAGNER, H .

SURFACE SCIENCE, 1975, 53 (DEC) :351-358

[2]

BESOCKE K, 1973, PHYS REV B, V8, P4597, DOI 10.1103/PhysRevB.8.4597

[3] ANGLE-RESOLVED PHOTOEMISSION-STUDIES OF GAAS(100) SURFACES GROWN BY MOLECULAR-BEAM EPITAXY [J].

CHIANG, TC ;

LUDEKE, R ;

AONO, M ;

LANDGREN, G ;

HIMPSEL, FJ ;

EASTMAN, DE .

PHYSICAL REVIEW B, 1983, 27 (08) :4770-4778

[4] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDIES OF EPITAXIAL-GROWTH ON SEMICONDUCTOR SURFACES [J].

COHEN, PI ;

PUKITE, PR ;

VANHOVE, JM ;

LENT, CS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :1251-1258

[5] CURRENT UNDERSTANDING AND APPLICATIONS OF THE RHEED INTENSITY OSCILLATION TECHNIQUE [J].

DOBSON, PJ ;

JOYCE, BA ;

NEAVE, JH ;

ZHANG, J .

JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :1-8

[6] INTERACTION KINETICS OF AS4 AND GA ON [100] GAAS SURFACES USING A MODULATED MOLECULAR-BEAM TECHNIQUE [J].

FOXON, CT ;

JOYCE, BA .

SURFACE SCIENCE, 1975, 50 (02) :434-450

[7] ELECTRONIC AND STRUCTURAL-PROPERTIES OF STEPS ON CLEAVED SEMICONDUCTOR SURFACES [J].

KRUEGER, S ;

MONCH, W .

SURFACE SCIENCE, 1980, 99 (01) :157-164

[8]

LARSEN PK, 1982, PHYS REV B, V26, P3222, DOI 10.1103/PhysRevB.26.3222

[9] SURFACE-STATES AT CLEAN, CLEAVED GAAS(110) SURFACES [J].

MONCH, W ;

CLEMENS, HJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1238-1243

[10]

REED CE, 1975, SURFACE PHYSICS PHOS, P272

← 1 2 →