Effect of polishing parameters on abrasive free chemical mechanical planarization of semi-polar (11(2)over-bar2) aluminum nitride surface

被引：10

作者：

Asghar, Khushnuma ^{[1
]}

Das, D. ^{[1
]}

机构：

[1] Univ Hyderabad, Sch Engn Sci & Technol, Hyderabad 500046, Andhra Pradesh, India

来源：

JOURNAL OF SEMICONDUCTORS | 2016年 / 37卷 / 03期

关键词：

AlN; AFCMP; chemical mechanical planarization; material removal rate; surface roughness;

D O I：

10.1088/1674-4926/37/3/036001

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

An abrasive free chemical mechanical planarization (AFCMP) of semi-polar (11 (2) over bar2) AlN surface has been demonstrated. The effect of slurry pH, polishing pressure, and platen velocity on the material removal rate (MRR) and surface quality (RMS roughness) have been studied. The effect of polishing pressure on the AFCMP of the (11 (2) over bar2) AlN surface has been compared with that of the (11 (2) over bar2) AlGaN surface. The maximum MRR has been found to be similar to 562 nm/h for the semi-polar (11 (2) over bar2) AlN surface, under the experimental conditions of 38 kPa pressure, 90 rpm platen velocity, 30 rpm carrier velocity, slurry pH 3 and 0.4 M oxidizer concentration. The best root mean square (RMS) surface roughness of similar to 1.2 nm and similar to 0.7 nm, over a large scanning area of 0.70 x 0.96 mm(2), has been achieved on AFCMP processed semi-polar (11 (2) over bar2) AlN and (AlGaN) surfaces using optimized slurry chemistry and processing parameters.

引用

页数：7

共 20 条

[1] Influence of Polishing Parameters on Abrasive Free Chemical Mechanical Planarization (AFCMP) of Non-Polar (11-20) and Semi-Polar (11-22) GaN Surfaces [J].

Asghar, Khushnuma ;

Das, D. .

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2015, 4 (07) :P242-P250

[2] Effect of Polishing Parameters on Chemical Mechanical Planarization of C-Plane (0001) Gallium Nitride Surface Using SiO2 and Al2O3 Abrasives [J].

Asghar, Khushnuma ;

Qasim, Mohd ;

Das, D. .

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2014, 3 (08) :P277-P284

[3] X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN [J].

Bobea, M. ;

Tweedie, J. ;

Bryan, I. ;

Bryan, Z. ;

Rice, A. ;

Dalmau, R. ;

Xie, J. ;

Collazo, R. ;

Sitar, Z. .

JOURNAL OF APPLIED PHYSICS, 2013, 113 (12)

[4] Large-area AlN substrates for electronic applications: An industrial perspective [J].

Bondokov, Robert T. ;

Mueller, Stephan G. ;

Morgan, Kenneth E. ;

Slack, Glen A. ;

Schujman, Sandra ;

Wood, Mark C. ;

Smart, Joseph A. ;

Schowalter, Leo J. .

JOURNAL OF CRYSTAL GROWTH, 2008, 310 (17) :4020-4026

[5] Optimizing the internal quantum efficiency of GaInNSQW structures for green light emitters [J].

Fuhrmann, D. ;

Rossow, U. ;

Netzel, C. ;

Bremers, H. ;

Ade, G. ;

Hinze, P. ;

Hangleiter, A. .

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, 3 (06) :1966-1969

[6] Progress in the growth of nonpolar gallium nitride [J].

Haskell, B. A. ;

Nakamura, S. ;

DenBaars, S. P. ;

Speck, J. S. .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2007, 244 (08) :2847-2858

[7] Interfacial structure of semipolar AlN grown on m-plane sapphire by MBE [J].

Kehagias, Th. ;

Lahourcade, L. ;

Lotsari, A. ;

Monroy, E. ;

Dimitrakopulos, G. P. ;

Komninou, Ph. .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2010, 247 (07) :1637-1640

[8] Investigation on Thermal Conductivity of Aluminum Nitride Ceramics by FT-Raman Spectroscopy [J].

Lee, Hyeon-Keun ;

Kim, Do Kyung .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2010, 93 (08) :2167-2170

[9]

Moeggenbong K, 2010, USA Patent, Patent No. [0062601 A1, 0062601]

[10] Recent progress of AlInGaN laser diodes [J].

Nagahama, SI ;

Sugimoto, Y ;

Kozaki, T ;

Mukai, T .

Novel In-Plane Semiconductor Lasers IV, 2005, 5738 :57-62

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