BORON REDISTRIBUTION IN SILICON BY THERMAL OXIDATION

被引:7
作者
LEUENBERGER, F
机构
关键词
D O I
10.1063/1.1702585
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2911 / &
相关论文
共 2 条
[1]   IMPURITY REDISTRIBUTION AND JUNCTION FORMATION IN SILICON BY THERMAL OXIDATION [J].
ATALLA, MM ;
TANNENBAUM, E .
BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (04) :933-946
[2]   RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].
IRVIN, JC .
BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+