SIMS DEPTH RESOLUTION STUDIES IN ALXGA1-XAS USING SPECIALLY GROWN MBE SAMPLES

被引：8

作者：

HOULTON, MR ^{[1
]}

BLACKMORE, GW ^{[1
]}

EMENY, MT ^{[1
]}

WHITEHOUSE, CR ^{[1
]}

CHEW, A ^{[1
]}

SYKES, DE ^{[1
]}

机构：

[1] LOUGHBOROUGH UNIV TECHNOL,ISST,LOUGHBOROUGH LE11 3TU,LEICS,ENGLAND

来源：

SURFACE AND INTERFACE ANALYSIS | 1993年 / 20卷 / 01期

关键词：

D O I：

10.1002/sia.740200111

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A quantitative analysis of the effect that the surface roughening due to oxygen ion bombardment has on the depth resolution of SIMS profiles has been carried out for the semiconductor alloys AlxGa1-xAs (x = 0, 0.175, 0.384 and 0.69) for a range of bombardment energies from 2 keV to 10.5 keV in two Cameca IMS 3F instruments. The loss of depth resolution is greater (and occurs at greater depths) with higher impact energies but occurs more rapidly with increasing x values. Good correlation is observed with the secondary ion signal intensity changes caused by surface roughening. No change of sample erosion rate is observed. No similar effect could be found with Cs, Ar, Xe, N or N2 bombardment.

引用

页码：69 / 76

页数：8

共 8 条

[1] SURFACE-TOPOGRAPHY OF ELECTRONIC MATERIALS FOLLOWING OXYGEN AND CESIUM ION-BOMBARDMENT [J].

DUNCAN, S ;

SMITH, R ;

SYKES, DE ;

WALLS, JM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :621-622

[2] SURFACE-MORPHOLOGY OF SI(100), GAAS(100) AND INP(100) FOLLOWING O-2+ AND CS+ ION-BOMBARDMENT [J].

DUNCAN, S ;

SMITH, R ;

SYKES, DE ;

WALLS, JM .

VACUUM, 1984, 34 (1-2) :145-151

[3]

KAREN A, 1990, SECONDARY ION MASS S, V7, P139

[4]

MCPHAIL DS, 1988, SCANNING MICROSCOPY, V2, P639

[5] DETERMINATION OF THE ANGLE OF INCIDENCE IN A CAMECA IMS-4F SIMS INSTRUMENT [J].

MEURIS, M ;

DEBISSCHOP, P ;

LECLAIR, JF ;

VANDERVORST, W .

SURFACE AND INTERFACE ANALYSIS, 1989, 14 (11) :739-743

[6]

SMITH SP, 1990, SIMS, V7, P107

[7] SECONDARY ION YIELD CHANGES IN SI AND GAAS DUE TO TOPOGRAPHY CHANGES DURING O-2+ OR CS+ ION-BOMBARDMENT [J].

STEVIE, FA ;

KAHORA, PM ;

SIMONS, DS ;

CHI, P .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (01) :76-80

[8] EFFECT OF SURFACE ROUGHENING ON SECONDARY ION YIELDS AND EROSION RATES OF SILICON SUBJECT TO OBLIQUE OXYGEN BOMBARDMENT [J].

WITTMAACK, K .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03) :2246-2250

← 1 →