TAIL-STATE DISTRIBUTION IN THE DENSITY OF STATES OF P-TYPE A-SI-H

被引：3
作者：
SCHAUER, F [1 ]
NESLADEK, M [1 ]
STUCHLIK, J [1 ]
机构：
[1] CZECHOSLOVAK ACAD SCI, INST PHYS, CS-18040 PRAGUE 8, CZECHOSLOVAKIA
来源：
PHILOSOPHICAL MAGAZINE LETTERS | 1991年 / 64卷 / 05期
关键词：
D O I：
10.1080/09500839108214628
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The methods of temperature-modulated space-charge-limited currents (TM-SCLC) and post transit photocurrent analysis (PTPA) have been used to study the tail-state distribution in density of states (DOS) of p-doped a-Si: H in annealed and light soaked state. It is shown that light soaking causes an increase in the midgap DOS at about 0.50-0.55 eV accompanied by a decrease in the DOS at about 0.40-0.45 eV.
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页码：321 / 326
页数：6
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