INTERFACE STUDY IN EPITAXIAL VAPOUR GROWN GAAS

被引:20
作者
HOLLAN, L
HALLAIS, J
SCHILLER, C
机构
关键词
D O I
10.1016/0022-0248(71)90226-0
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
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页码:165 / &
相关论文
共 8 条
[1]   THERMODYNAMIC AND EXPERIMENTAL ASPECTS OF GALLIUM ARSENIDE VAPOR GROWTH [J].
BOUCHER, A ;
HOLLAN, L .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) :932-&
[2]  
BOUCHER A, TO BE PUBLISHED
[3]  
COPELAND JA, 1969, IEEE T ELECTRON DEVI, VED16, P445
[4]  
EASTON BE, PRIVATE COMMUNICATIO
[5]  
FABRE E, 1970, CR ACAD SCI B PHYS, V270, P848
[6]   PREPARATION OF HIGH PURITY GALLIUM ARSENIDE BY VAPOUR PHASE EPITAXIAL GROWTH [J].
KNIGHT, JR ;
EFFER, D ;
EVANS, PR .
SOLID-STATE ELECTRONICS, 1965, 8 (02) :178-&
[7]   DEVELOPMENT OF A METHOD IN X-RAY REFLEXION TOPOGRAPHY [J].
SCHILLER, C .
JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1969, 2 :223-&
[8]  
SCHILLER C, 1969 M IEE MUN