BAND STRUCTURE AND DIRECT TRANSITION ELECTROLUMINESCENCE IN IN1-XGAXP ALLOYS

被引：68

作者：

LORENZ, MR

REUTER, W

DUMKE, WP

CHICOTKA, RJ

PETTIT, GD

WOODALL, JM

机构：

[1] IBM Watson Research Center, Yorktown Heights

来源：

APPLIED PHYSICS LETTERS | 1968年 / 13卷 / 12期

关键词：

D O I：

10.1063/1.1652500

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The position of the (1, 0, 0) minima in InP are determined from measurements in the region of interconduction band absorption. Direct transition electroluminescence in the In1-xGaxP alloys is observed over a range of alloys up to x = 0.8 and photon energies of up to 2.2 eV at 300°K and is consistent with the bandstructure determined for InP and that of GaP. © 1969 The American Institute of Physics.

引用

页码：421 / &

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