SYNTHESIS AND LITHOGRAPHIC CHARACTERIZATION OF BLOCK-COPOLYMER RESISTS CONSISTING OF BOTH POLY(STYRENE) BLOCKS AND HYDROSILOXANE-MODIFIED POLY(DIENE) BLOCKS

被引：29

作者：

GABOR, AH ^{[1
]}

LEHNER, EA ^{[1
]}

MAO, GP ^{[1
]}

SCHNEGGENBURGER, LA ^{[1
]}

OBER, CK ^{[1
]}

机构：

[1] CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853

来源：

CHEMISTRY OF MATERIALS | 1994年 / 6卷 / 07期

关键词：

D O I：

10.1021/cm00043a011

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We investigated block copolymer resists consisting of both poly(styrene) blocks and hydrosiloxane-modified poly(diene) blocks which have good properties for use as negative tone, electron beam resists. The polymers were prepared by attaching hydrosiloxanes to the diene blocks of styrene-diene block copolymers using platinum divinyltetramethyldisiloxane complex. A resolution better than 0.1 mum for an isolated line, sensitivity of 30 muC/cm2, and contrast of 2.8 were demonstrated using a block copolymer consisting of a poly(styrene) block and a pentamethyldisiloxane-modified poly(isoprene) block (PS-b-PDPI). Used in a bilayer resist scheme, PS-b-PDPI has an oxygen RIE selectivity ratio of 42 with respect to poly(imide). Oxygen RIE selectivity ratios with respect to poly(imide) as large as 54 were measured for other hydrosiloxane-modified block copolymers we prepared. In a bilayer resist system, using PS-b-PDPI as the imageable layer, patterns of 0.3-mum-wide lines and 1.5-mum-wide spaces were transferred through a 1.2-mum-thick poly(imide) planarizing layer.

引用

页码：927 / 934

页数：8

共 44 条

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