EXCESS CURRENT IN GALLIUM ARSENIDE TUNNEL DIODES

被引：12

|

作者：

NANAVATI, RP

DEANDRADE, CA

机构：

来源：

PROCEEDINGS OF THE IEEE | 1964年 / 52卷 / 07期

关键词：

D O I：

10.1109/PROC.1964.3161

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：869 / &

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