X-RAY-MEASUREMENT OF MINUTE LATTICE STRAIN IN PERFECT SILICON-CRYSTALS

被引：49
作者：
BONSE, U
HARTMANN, I
机构：
来源：
ZEITSCHRIFT FUR KRISTALLOGRAPHIE | 1981年 / 156卷 / 3-4期
关键词：
D O I：
10.1524/zkri.1981.156.3-4.265
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
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页码：265 / 279
页数：15
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