PLASMA IMMERSION ION-IMPLANTATION - A CLUSTER COMPATIBLE TECHNOLOGY

被引：0
|
作者：
PICO, C [1 ]
机构：
[1] TEXAS INSTRUMENTS INC,SEMICOND PROC LAB,DALLAS,TX 75265
来源：
SOLID STATE TECHNOLOGY | 1992年 / 35卷 / 05期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Relatively low voltage, cluster compatible, plasma immersion ion implantation is suitable for shallow junction formation (less than or similar to 10 nm). The process produces no known damage in ultrathin (< 10 nm) gate oxides. Both the method and the equipment are described.
引用
收藏
页码：81 / 84
页数：4
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