TRANSMISSION ELECTRON-MICROSCOPY STUDY OF CHEMICALLY ETCHED POROUS SI

被引：33

作者：

SHIH, S

JUNG, KH

QIAN, RZ

KWONG, DL

机构：

[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas at Austin, Austin

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 05期

关键词：

D O I：

10.1063/1.108935

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a new, minimal damage approach for examination of luminescent porous Si (PS) layers by transmission electron microscopy (TEM). In this approach, chemically etched (CE) PS layers are fabricated after conventional plan-view TEM sample preparation. Our TEM studies show that crystalline, polycrystalline, and amorphous phases exist in the same CE sample. The microstructure is believed to gradually change from crystalline to amorphous during chemical etching in a HF-HNO3-H2O solution. The microcrystallites in the polycrystalline region are estimated to be 15-100 angstrom, while the pore size is on the order of 400 angstrom.

引用

页码：467 / 469

页数：3

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