UNIFIED PRESENTATION OF 1/F NOISE IN ELECTRONIC DEVICES - FUNDAMENTAL 1/F NOISE SOURCES

被引：251
作者：
VANDERZIEL, A [1 ]
机构：
[1] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455
来源：
PROCEEDINGS OF THE IEEE | 1988年 / 76卷 / 03期
关键词：
D O I：
10.1109/5.4401
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
SEMICONDUCTOR DEVICES
引用
收藏
页码：233 / 258
页数：26
相关论文
共 94 条
[1]   1/F-NOISE IN DIFFUSED AND ION-IMPLANTED MOS CAPACITORS [J].
AMBERIADIS, K ;
VANDERZIEL, A .
SOLID-STATE ELECTRONICS, 1983, 26 (10) :1009-1017
[2]  
BIRBAS AN, 1987, 9TH INT C NOIS PHYS
[3]  
BIRBAS AN, 1987, IN PRESS 9TH INT C N
[4]  
BIRBAS AN, IN PRESS
[5]   FLICKER NOISE OF HOT-ELECTRONS IN SILICON AT T=78-K [J].
BOSMAN, G ;
ZIJLSTRA, RJJ ;
VANRHEENEN, A .
PHYSICS LETTERS A, 1980, 78 (04) :385-386
[6]   FLICKER NOISE OF HOT HOLES IN SILICON AT 78-K [J].
BOSMAN, G ;
ZIJLSTRA, RJJ ;
VANRHEENEN, A .
PHYSICS LETTERS A, 1980, 80 (01) :57-58
[7]  
BOSMAN G, COMMUNICATION
[8]  
CHEN WC, 1987, 9TH INT C NOIS PHYS
[9]   LOW FREQUENCY NOISE IN MOS TRANSISTORS .I. THEORY [J].
CHRISTEN.S ;
LUNDSTRO.I ;
SVENSSON, C .
SOLID-STATE ELECTRONICS, 1968, 11 (09) :797-&
[10]   LOW FREQUENCY NOISE IN MOS TRANSISTORS .2. EXPERIMENTS [J].
CHRISTEN.S ;
LUNDSTRO.I .
SOLID-STATE ELECTRONICS, 1968, 11 (09) :813-&
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