GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE PLANAR STRIPE LASER

被引：211

作者：

YONEZU, H ^{[1
]}

SAKUMA, I ^{[1
]}

KOBAYASH.K ^{[1
]}

KAMEJIMA, T ^{[1
]}

UENO, M ^{[1
]}

NANNICHI, Y ^{[1
]}

机构：

[1] NIPPON ELECTRIC CO LTD, CENT RES LABS, KAWASAKI, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1973年 / 12卷 / 10期

关键词：

D O I：

10.1143/JJAP.12.1585

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1585 / 1592

页数：8

共 13 条

[1]

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[8] REPRODUCIBLE LIQUID-PHASE-EPITAXIAL GROWTH OF DOUBLE HETEROSTRUCTURE GAAS-ALXGA1-XAS LASER-DIODES [J].

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[9] HIGHLY UNIFORM ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS AND THEIR CHARACTERISTICS AT ROOM TEMPERATURE [J].

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[10] STRIPE-GEOMETRY DOUBLE HETEROSTRUCTURE JUNCTION LASERS - MODE STRUCTURE AND CW OPERATION ABOVE ROOM TEMPERATURE [J].

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