CONTRIBUTION TO PROBLEM OF INFLUENCE OF ELECTRIC-FIELD ON CONDUCTIVITY OF AMORPHOUS-SEMICONDUCTORS

被引：9

作者：

BANIK, I ^{[1
]}

机构：

[1] SLOVAK UNIV TECHNOL BRATISLAVA, ELECTROTECH FAC, DEPT PHYS, GOTTWALDOVA NAM 2, 88019 BRATISLAVA, CZECHOSLOVAKIA

来源：

CZECHOSLOVAK JOURNAL OF PHYSICS | 1975年 / B 25卷 / 05期

关键词：

D O I：

10.1007/BF01589429

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：552 / 566

页数：15

共 50 条

[1] ELECTRIC-FIELD DEPENDENT CONDUCTIVITY IN AMORPHOUS-SEMICONDUCTORS
KAHNT, H
SCHIRRMEISTER, F
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 115 (01): : 171 - 179
[2] ON THE HOPPING CONDUCTION MECHANISM OF AMORPHOUS-SEMICONDUCTORS IN A STRONG ELECTRIC-FIELD
BEREZIN, AA
PHYSICS LETTERS A, 1981, 86 (09) : 480 - 482
[3] ELECTRIC-FIELD DEPENDENT DIELECTRIC-CONSTANTS IN AMORPHOUS-SEMICONDUCTORS
KHAN, WI
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1994, 183 (01): : 277 - 285
[4] CONTRIBUTION TO INTERPRETATION OF HIGH-FIELD ELECTRICAL-CONDUCTIVITY OF AMORPHOUS-SEMICONDUCTORS
SMID, V
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1976, 74 (02): : K169 - K171
[5] INFLUENCE OF A STRONG ELECTRIC-FIELD ON MICROWAVE CONDUCTIVITY OF SEMICONDUCTORS
IWAINSKY, A
RICHTER, T
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1973, 59 (02): : 487 - 494
[6] THERMOSTIMULATED CONDUCTIVITY IN AMORPHOUS-SEMICONDUCTORS
FRITZSCHE, H
IBARAKI, N
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 52 (03): : 299 - 311
[7] INFLUENCE OF A TRANSVERSE ELECTRIC-FIELD ON CHARACTERISTICS OF RESIDUAL CONDUCTIVITY OF SEMICONDUCTORS
ZHDAN, AG
LUSHNIKOV, NA
GULYAEV, IB
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (01): : 113 - 113
[8] CONDUCTIVITY OF SEMICONDUCTORS IN HIGH ELECTRIC-FIELD
BRYKSIN, VV
FIZIKA TVERDOGO TELA, 1972, 14 (10): : 2902 - &
[9] MESOSCOPIC EFFECTS IN THE CONDUCTIVITY OF AMORPHOUS-SEMICONDUCTORS
KRAMER, B
SCHREIBER, M
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 : 330 - 332
[10] CONDUCTIVITY OF INHOMOGENEOUS SEMICONDUCTORS IN AN ALTERNATING ELECTRIC-FIELD
PRIMA, NA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (07): : 810 - 812

← 1 2 3 4 5 →