NEW METHODS OF DETERMINING FOURIER COEFFICIENTS OF CRYSTAL POTENTIAL FROM THICKNESS FRINGES IN ELECTRON MICROGRAPHS

被引：7

作者：

ICHIMIYA, A

ARII, T

UYEDA, R

FUKUHARA, A

机构：

[1] NAGOYA UNIV,FAC ENGN,DEPT APPL PHYS,NAGOYA,JAPAN

[2] HIATCHI CENT RES LAB,KOKUBUNJI,TOKYO,JAPAN

来源：

ACTA CRYSTALLOGRAPHICA SECTION A | 1973年 / A 29卷 / NOV1期

关键词：

D O I：

10.1107/S0567739473001774

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：724 / 725

页数：2

共 7 条

[1] DETERMINATION OF STRUCTURE FACTORS FROM DYNAMICAL EFFECTS IN ELECTRON DIFFRACTION [J].

COWLEY, JM .

ACTA CRYSTALLOGRAPHICA SECTION A-CRYSTAL PHYSICS DIFFRACTION THEORETICAL AND GENERAL CRYSTALLOGRAPHY, 1969, A 25 :129-&

[2] APPLICATION OF NON-SYSTEMATIC MANY-BEAM DYNAMIC EFFECTS TO STRUCTURE-FACTOR DETERMINATION [J].

GJONNES, J ;

HOIER, R .

ACTA CRYSTALLOGRAPHICA SECTION A-CRYSTAL PHYSICS DIFFRACTION THEORETICAL AND GENERAL CRYSTALLOGRAPHY, 1971, A 27 (JUL1) :313-&

[3] ELECTRON DIFFRACTION STUDY OF MGO HOO SYSTEMATIC INTERACTIONS [J].

GOODMAN, P ;

LEHMPFUHL, G .

ACTA CRYSTALLOGRAPHICA, 1967, 22 :14-+

[4] INTERFERENCE FRINGES IN ELECTRON MICROGRAPHS OF MAGNESIUM OXIDE [J].

HIBI, T ;

KAMBE, K ;

HONJO, G .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1955, 10 (01) :35-46

[5] DETERMINATION OF STRUCTURE POTENTIALS AND ABSORPTION POTENTIALS OF SILICON FROM ELECTRON DIFFRACTION INTENSITIES [J].

KREUTLE, M ;

MEYEREHM.G .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 8 (01) :111-&

[6]

LEHMPFUHL G, 1972, Z NATURFORSCH PT A, VA 27, P425

[7] A NEW METHOD OF DETERMINING ATOM FORM FACTOR BY HIGH VOLTAGE ELECTRON DIFFRACTION . AN APPLICATION OF EFFECT OF VANISHING SECOND ORDER REFLEXION [J].

WATANABE, D ;

UYEDA, R .

ACTA CRYSTALLOGRAPHICA SECTION A-CRYSTAL PHYSICS DIFFRACTION THEORETICAL AND GENERAL CRYSTALLOGRAPHY, 1968, A 24 :580-&

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