MONO-CRYSTALLINE ALUMINUM OHMIC CONTACT TO N-GAAS BY H2S ADSORPTION

被引：73
作者：
MASSIES, J
CHAPLART, J
LAVIRON, M
LINH, NT
机构：
来源：
APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 09期
关键词：
D O I：
10.1063/1.92473
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：693 / 695
页数：3
相关论文
共 22 条
[1]   SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].
BARDEEN, J .
PHYSICAL REVIEW, 1947, 71 (10) :717-727
[2]   NON-ALLOYED OHMIC CONTACTS TO NORMAL-GAAS BY MOLECULAR-BEAM EPITAXY [J].
BARNES, PA ;
CHO, AY .
APPLIED PHYSICS LETTERS, 1978, 33 (07) :651-653
[3]   SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS [J].
CHANG, CY ;
FANG, YK ;
SZE, SM .
SOLID-STATE ELECTRONICS, 1971, 14 (07) :541-&
[4]   GAAS EPITAXY BY A MOLECULAR BEAM METHOD - OBSERVATIONS OF SURFACE STRUCTURE ON (001) FACE [J].
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) :2074-&
[5]   COMPOSITION AND STRUCTURE OF DIFFERENTLY PREPARED GAAS(100) SURFACES STUDIED BY LEED AND AES [J].
DRATHEN, P ;
RANKE, W ;
JACOBI, K .
SURFACE SCIENCE, 1978, 77 (01) :L162-L166
[6]   MOLECULAR-BEAM SYSTEM CONTROLLED BY QUADRUPOLE MASS-SPECTROMETER [J].
ETIENNE, P ;
MASSIES, J ;
LINH, NT .
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1977, 10 (11) :1153-1155
[7]   INTRINSIC AND DEFECT-INDUCED SURFACE-STATES OF CLEAVED GAAS(110) [J].
GUICHAR, GM ;
SEBENNE, CA ;
GARRY, GA .
PHYSICAL REVIEW LETTERS, 1976, 37 (17) :1158-1161
[8]   STEPS ON III-V(110) FACES - THEORETICAL INVESTIGATION [J].
LOHEZ, D ;
LANNOO, M .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1236-1237
[9]   STOICHIOMETRY EFFECTS ON SURFACE-PROPERTIES OF GAAS(100) GROWN INSITU BY MBE [J].
MASSIES, J ;
ETIENNE, P ;
DEZALY, F ;
LINH, NT .
SURFACE SCIENCE, 1980, 99 (01) :121-131
[10]  
MASSIES J, 1980, REV TECH THOMSON, V12, P281
123