EFFECT OF A MAGNETIC FIELD ON DONOR IMPURITY LEVELS IN INSB

被引：85

作者：

KEYES, RW

SLADEK, RJ

机构：

来源：

关键词：

D O I：

10.1016/0022-3697(56)90021-X

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：143 / 145

页数：3

共 6 条

[1] HALL EFFECT AND CONDUCTIVITY OF INSB [J].

HROSTOWSKI, HJ ;

MORIN, FJ ;

GEBALLE, TH ;

WHEATLEY, GH .

PHYSICAL REVIEW, 1955, 100 (06) :1672-1676

[2] IMPURITY BAND IN SEMICONDUCTORS WITH SMALL EFFECTIVE MASS [J].

STERN, F ;

TALLEY, RM .

PHYSICAL REVIEW, 1955, 100 (06) :1638-1643

[3] SATURATION HALL CONSTANT OF SEMICONDUCTORS [J].

SWANSON, JA .

PHYSICAL REVIEW, 1955, 99 (06) :1799-1807

WILLARDSON, RK ;

HARMAN, TC ;

BEER, AC .

PHYSICAL REVIEW, 1954, 96 (06) :1512-1518

[5]

Wilson A. H., 1953, THE THEORY OF METALS

[6] HYDROGEN ATOM IN A STRONG MAGNETIC FIELD [J].

YAFET, Y ;

KEYES, RW ;

ADAMS, EN .