REDUCED LATERAL DIFFUSION AND REVERSE LEAKAGE IN BE-IMPLANTED GAAS1-XPX DIODES

被引：13

作者：

CHATTERJEE, PK ^{[1
]}

STREETMAN, BG ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,COORDINATED SCI LAB,URBANA,IL 61801

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 04期

关键词：

D O I：

10.1016/0038-1101(77)90112-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：305 / &

共 9 条

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[2]

Chatterjee P. K., 1975, 1975 International Electron Devices Meeting. (Technical digest), P187, DOI 10.1109/IEDM.1975.188855

[3]

CHATTERJEE PK, 1976, THESIS U ILLINOIS

[4]

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[6] UNIFORM-CARRIER-CONCENTRATION PARA-TYPE LAYERS IN GAAS PRODUCED BY BERYLLIUM ION-IMPLANTATION [J].

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[7] OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE [J].

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[8] ANNEAL BEHAVIOR OF DEFECTS IN ION-IMPLANTED GAAS DIODES [J].

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[9] EXPERIMENTAL FABRICATION OF ONE-DIMENSIONAL GAAS LASER ARRAYS [J].

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