ULTRATHIN FILMS OF CELLULOSE ON SILICON-WAFERS

被引：195

作者：

SCHAUB, M ^{[1
]}

WENZ, G ^{[1
]}

WEGNER, G ^{[1
]}

STEIN, A ^{[1
]}

KLEMM, D ^{[1
]}

机构：

[1] FRIEDRICH SCHILLER UNIV,INST ORGAN & MAKROMOLEK CHEM,D-07743 JENA,GERMANY

来源：

ADVANCED MATERIALS | 1993年 / 5卷 / 12期

关键词：

D O I：

10.1002/adma.19930051209

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The first preparation of thin films of cellulose itself is reported. Cellulose exhibits excellent wetting behavior, is extremely stable against oxidation and other chemical degradation and in thin-film form would have a number of applications. The method involves the preparation of LB films of trimethylcellulose (see Figure) and the in situ conversion of these thin films on silicon substrates to cellulose.

引用

页码：919 / 922

页数：4

共 50 条

[31] PREOXIDATION UV TREATMENT OF SILICON-WAFERS [J].

RUZYLLO, J ;

DURANKO, GT ;

HOFF, AM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8A) :2052-2055

[32] INTERFEROMETRIC FLATNESS TESTING OF SILICON-WAFERS [J].

FEITSCHER, R ;

FRITZ, H ;

KORNER, K .

FRINGE 89: PROCEEDINGS OF THE 1ST INTERNATIONAL WORKSHOP ON AUTOMATIC PROCESSING OF FRINGE PATTERNS, 1989, 10 :57-61

[33] PHOTOACOUSTIC MEASUREMENTS OF DOPED SILICON-WAFERS [J].

AMATO, G ;

BENEDETTO, G ;

SPAGNOLO, R ;

TURNATURI, M .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 114 (02) :519-523

[34] PARALLELISM IMPROVEMENT OF GROUND SILICON-WAFERS [J].

MATSUI, S ;

HORIUCHI, T .

JOURNAL OF ENGINEERING FOR INDUSTRY-TRANSACTIONS OF THE ASME, 1991, 113 (01) :25-28

[35] ENHANCEMENT OF GOLD SOLUBILITY IN SILICON-WAFERS [J].

LI, JX ;

YANG, WS ;

TAN, TY .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (01) :527-529

[36] TESTING FOR OXYGEN PRECIPITATION IN SILICON-WAFERS [J].

不详 .

SOLID STATE TECHNOLOGY, 1987, 30 (03) :85-89

[37] STRUCTURAL CHARACTERIZATION OF PROCESSED SILICON-WAFERS [J].

FEJES, PL ;

LIAW, HM ;

DARAGONA, FS .

IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY, 1983, 6 (03) :314-322

[38] HYDROPHILICITY OF SILICON-WAFERS FOR DIRECT BONDING [J].

KISSINGER, G ;

KISSINGER, W .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1991, 123 (01) :185-192

[39] CARRIER LIFETIME MEASUREMENTS IN SILICON-WAFERS [J].

GHOSH, AK ;

TIEDJE, T ;

HABERMAN, JI ;

FRANCIS, RW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) :C86-C86

[40] SILICON-WAFERS SELF-BONDING [J].

MISEREY, F .

REVUE DE PHYSIQUE APPLIQUEE, 1990, 25 (07) :763-773

← 1 2 3 4 5 →