KINETICS OF OXIDATION ON DIFFERENTLY TREATED GAAS (100) SURFACES STUDIED BY XPS AND STM

被引：17
作者：
RICHTER, R
HARTNAGEL, HL
机构：
[1] Institutfur Hochfrequenztecbnik, Technische Hochschule Darmstadt, 6100, Darmstadt
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1990年 / 137卷 / 09期
关键词：
D O I：
10.1149/1.2087092
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The kinetics of oxidation on GaAs (100) surfaces after different chemical treatments are studied by XPS and STM. Etching in an alkaline solution containing NH4OH, photochemical etching and sulfur passivation in a (NH4)2S solution are compared regarding oxidation, surface stability in air, and electrical homogeneity. In contrast to alkaline etching, photochemical etching delays oxidation, and sulfur passivation makes the surface resistant to a subsequent uptake of oxygen for at least 50h in air. STM images after photochemical treatment show larger inhomogeneities than after passivation, and changes in surface structures in air are recorded correlating with the degree of oxidation. copyright. © 1990, The Electrochemical Society, Inc. All rights reserved.
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收藏
页码：2879 / 2883
页数：5
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