STRAINED INGAAS/INP QUANTUM-WELL LASERS

被引：58

作者：

TEMKIN, H

TANBUNEK, T

LOGAN, RA

机构：

[1] AT and T Bell Laboratories, Murray Hill

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 13期

关键词：

D O I：

10.1063/1.102562

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Quantum well lasers based on strained InxGa1 -xAs/InP were grown by atmospheric pressure metalorganic vapor phase epitaxy. Buried-heterostructure lasers with the active layer consisting of three quantum wells, each ∼50 Å thick, placed in a continuously graded waveguide, exhibit threshold currents as low as 15 mA, high quantum efficiency (24%), and power output (∼100 mW), independent of composition. Changing the In concentration from x=0.48 to 0.62 results in the lasing wavelength shift from 1.45 to 1.62 μm. These wavelengths are in excellent agreement with the calculated energies of the electron-heavy hole exciton transition.

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页码：1210 / 1212

页数：3

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