CHARACTERIZATION OF ANODIZED ALUMINIUM-COPPER VAPOR-DEPOSITED FILMS BY ION SCATTERING SPECTROMETRY

被引：11

作者：

STREHBLOW, HH ^{[1
]}

MALM, DL ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

CORROSION SCIENCE | 1979年 / 19卷 / 07期

关键词：

D O I：

10.1016/S0010-938X(79)80053-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Composition-depth profiles for anodized films, 100 Å thick, formed under galvanostatic conditions on vapour-deposited aluminium containing 1-10 at.% copper have been obtained via Ion Scattering Spectrometry (ISS). The O{single bond}Al ratio found for the anodic layer corresponds to that for Al2O3 and the Cu concentration in the aluminium metal measured near the oxide-metal interface was similar to that for non-oxidized alloys. Additionally, no metallic impurities (> 0.1 at.%) were detectable in the oxide layer or the alloy. © 1979 Pergamon Press Ltd.

引用

页码：469 / 473

页数：5

共 6 条

[1] REDUCTION OF ELECTROMIGRATION IN ALUMINUM FILMS BY COPPER DOPING [J].