RIDGE WAVE-GUIDE DFB LASER OPERATING AT LAMBDA = 1.5-MU-M, FABRICATED IN A SINGLE STEP EPITAXIAL-GROWTH

被引：4

作者：

BINSMA, JJM

TIEMEYER, LF

VANZANTVOORT, HACM

BAELE, I

VANDONGEN, T

VANDERHOFSTAD, GLA

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 12期

关键词：

D O I：

10.1143/JJAP.27.L2354

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L2354 / L2356

页数：3

共 39 条

[31] QUANTUM-WELL ELECTROABSORPTION MODULATORS AT 1.55 MU-M USING SINGLE-STEP SELECTIVE AREA CHEMICAL BEAM EPITAXIAL-GROWTH
CHEN, Y
ZUCKER, JE
CHIU, TH
MARSHALL, JL
JONES, KL
[J]. APPLIED PHYSICS LETTERS, 1992, 61 (01) : 10 - 12
[32] A SIMPLE CONSTRUCTION TO PRODUCE SHORT WAVELENGTH RADIATION LAMBDA-LESS-THAN-OR-EQUAL-TO-50 MU-M) WITH AN OPTICALLY PUMPED FIR WAVE-GUIDE LASER
VANKLARENBOSCH, A
KLAASSEN, TO
[J]. MEASUREMENT SCIENCE AND TECHNOLOGY, 1991, 2 (02) : 179 - 180
[33] EFFICIENT LINEWIDTH REDUCTION IN CONVENTIONAL 1.5 MU-M LASER-DIODES BY INTEGRATION TO A WEAKLY COUPLED INGAASP BRAGG WAVE-GUIDE WITH LOW OPTICAL LOSSES
DECOOMAN, BC
VANDERHOFSTAD, GLA
KUINDERSMA, PI
SCHEEPERS, W
CNOOPS, JMH
BAELE, IAF
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (02) : 111 - 113
[34] PERFORMANCE OF 1.3 MU-M RIDGE-WAVE-GUIDE DISTRIBUTED-FEEDBACK LASERS FABRICATED BY ONE-STEP METALORGANIC CHEMICAL-VAPOR-DEPOSITION
LU, H
BLAAUW, C
MARITAN, C
CHIK, KD
[J]. IEE PROCEEDINGS-OPTOELECTRONICS, 1994, 141 (05): : 316 - 322
[35] HIGH-POWER OPERATION IN 0.98 MU-M STRAINED-LAYER INGAAS-GAAS SINGLE-QUANTUM-WELL RIDGE WAVE-GUIDE LASERS
TAKESHITA, T
OKAYASU, M
UEHARA, S
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (12) : 849 - 851
[36] FREQUENCY-STABILIZED SINGLE-MODE CW 118.8-MU-M CH3OH WAVE-GUIDE LASER FOR LARGE TOKAMAK DIAGNOSTICS
FUKUDA, T
NAGASHIMA, A
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1989, 60 (06) : 1080 - 1085
[37] BURIED-OXIDE RIDGE-WAVE-GUIDE INALAS-INP-INGAASP (LAMBDA-SIMILAR-TO-1.3-MU-M) QUANTUM-WELL HETEROSTRUCTURE LASER-DIODES
KRAMES, MR
HOLONYAK, N
EPLER, JE
SCHWEIZER, HP
[J]. APPLIED PHYSICS LETTERS, 1994, 64 (21) : 2821 - 2823
[38] 1.5-MUM INGAASP DOUBLE-CHANNEL PLANAR-BURIED HETEROSTRUCTURE LASER-DIODES FABRICATED BY 2-STEP VAPOR-PHASE AND LIQUID-PHASE EPITAXIAL-GROWTH
YANASE, T
SUGOU, S
KITAMURA, M
KATOU, Y
NISHI, K
NISHIMOTO, H
YAMAGUCHI, M
MITO, I
[J]. NEC RESEARCH & DEVELOPMENT, 1985, (79): : 21 - 28
[39] LP-MOVPE GROWTH AND CHARACTERIZATION OF WIDE-GAP INGAASP/INP LAYERS (LAMBDA-G LESS-THAN 1.2-MU-M) FOR OPTICAL WAVE-GUIDE APPLICATIONS
REIER, FW
HARDE, P
KAISER, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 867 - 870

← 1 2 3 4 →