INVESTIGATION OF RADIATION-DAMAGE BY ELECTRON-BEAM ABSORPTION-MEASUREMENTS

被引：4
作者：
FRITZSCHE, CR
ROTHEMUND, W
机构：
来源：
APPLIED PHYSICS | 1978年 / 16卷 / 04期
关键词：
D O I：
10.1007/BF00885857
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：339 / 343
页数：5
相关论文
共 9 条
[1]  
DAVIDSON SM, 1971, ION IMPLANTATION, P51
[2]   AMORPHIZATION OF SILICON BY ION-IMPLANTATION - HOMOGENEOUS OR HETEROGENEOUS NUCLEATION [J].
DENNIS, JR ;
HALE, EB .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 30 (04) :219-225
[3]   SIMPLE METHOD FOR CALCULATION OF ENERGY DEPOSITION PROFILES FROM RANGE DATA OF IMPLANTED IONS [J].
FRITZSCHE, CR .
APPLIED PHYSICS, 1977, 12 (04) :347-353
[4]  
GIBBONS JF, 1975, PROJECTED RANGE STAT
[5]  
JAKOBUS T, 1977, VERH DTSCH PHYSIKAL, V12, P161
[6]  
Kimerling L. C., 1975, Lattice Defects in Semiconductors, 1974, P126
[7]  
REIMER L, 1973, RASTER ELEKTRONENMIK
[8]   INVESTIGATION OF ION-IMPLANTED LAYERS BY SCANNING ELECTRON-MICROSCOPY [J].
ROTHEMUND, W ;
FRITZSCHE, CR .
APPLIED PHYSICS, 1976, 10 (02) :111-119
[9]  
ROTHEMUND W, UNPUBLISHED
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