MICROWAVE INCREMENTAL CONDUCTIVITY OF INSB AT 77 DEGREES K IN PRESENCE OF HIGH STEADY ELECTRIC FIELD

被引：14

作者：

MUKHOPADHYAY, D

NAG, BR

机构：

[1] Institute of Radio Physics & Electronics University of Calcutta, Calcutta

来源：

ELECTRONICS LETTERS | 1969年 / 5卷 / 02期

关键词：

D O I：

10.1049/el:19690014

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Complex microwave incremental conductivity of InSb at 77° K in the presence of a high steady electric field has been calculated assuming a displaced Maxwellian distribution function. The calculated values of the real and imaginary parts of the conductivity are found to be in close agreement with the experimental results for both the parallel and perpendicular orientation of the microwave field. © 1969, The Institution of Electrical Engineers. All rights reserved.

引用

页码：20 / +

页数：1

共 6 条

[1]

BONEK E, HL7 I HOCHFR TECHN H

[2] MICROWAVE CONDUCTIVITY OF POLAR SEMICONDUCTORS IN PRESENCE OF HIGH ELECTRIC FIELD [J].

DAS, P ;

RIFKIN, RH ;

POOLE, JJ .

ELECTRONICS LETTERS, 1967, 3 (11) :515-&

[3] A STUDY OF ENERGY-LOSS PROCESSES IN GERMANIUM AT HIGH ELECTRIC FIELDS USING MICROWAVE TECHNIQUES [J].

GIBSON, AF ;

GRANVILLE, JW ;

PAIGE, EGS .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 19 (3-4) :198-217

[4] HOT ELECTRONS IN INDIUM ANTIMONIDE [J].

GLICKSMAN, M ;

HICINBOTHEM, WA .

PHYSICAL REVIEW, 1963, 129 (04) :1572-+

[5] MICROWAVE CONDUCTIVITY OF POLAR SEMICONDUCTORS IN PRESENCE OF A HIGH ELECTRIC FIELD [J].

KOPETZ, H ;

POTZL, HW .

ELECTRONICS LETTERS, 1968, 4 (05) :79-&

[6] THE INFLUENCE OF INTERELECTRONIC COLLISIONS ON CONDUCTION AND BREAKDOWN IN POLAR CRYSTALS [J].

STRATTON, R .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1958, 246 (1246) :406-422

← 1 →